These other devices are based on various processes. The power amplifier isn’t the only device in the base station. Power amplifiers are small circuits that convert a low-power RF signal into a higher power signal in base stations and other systems. Over time, GaN power amps made significant inroads in 4G, at the expense of LDMOS. LDMOS, a mature and inexpensive technology, took the early lead in the 4G base station market. Generally, the power amplifier device for previous-generation 3G base stations were based on LDMOS. A so-called macro base station is a system located at a cell tower, which provides RF wireless coverage over a wide area. From there the devices are shipped to base station vendors for integration. In just one part of the supply chain, device makers manufacture RF chips like power amplifiers in fabs. Nonetheless, 5G is a fast-moving but complex market. And LDMOS (laterally-diffused metal-oxide semiconductor) has some limitations, but it isn’t going away. But GaN is expensive with some challenges in the fab. GaN, a III-V technology, outperforms LDMOS, making it ideal for the high-frequency requirements for 5G.
It’s based on two competitive technologies, silicon-based LDMOS or RF gallium nitride (GaN). The power amplifier device is a key component that boosts the RF power signals in base stations. Demand is increasing for power amplifier chips and other RF devices for 5G base stations, setting the stage for a showdown among different companies and technologies.